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Pure Appl. Chem., 2000, Vol. 72, No. 1-2, pp. 199-207

http://dx.doi.org/10.1351/pac200072010199

Distribution and shape of self-assembled InAs quantum dots grown on GaAs (001)

K. Zhang*, J. Falta, Th. Schmidt, Ch. Heyn, G. Materlik and W. Hansen

Institut für Angewandte Physik, Universität Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany

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  • Rajagopalan M., Mazumder P.: Tunneling Through Finite Quantum Dot Superlattices. Arab J Sci Eng 2014, 39, 1863. <http://dx.doi.org/10.1007/s13369-013-0806-8>
  • Villada J.A., Jiménez-Sandoval S., López-López M., Baños L., Rodríguez-García M.E.: Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs. Phys B 2010, 405, 2185. <http://dx.doi.org/10.1016/j.physb.2010.02.003>
  • Zolotaryov A., Schramm A., Heyn Ch., Hansen W.: InAs-coverage dependence of self-assembled quantum dot size, composition, and density. Appl Phys Lett 2007, 91, 083107. <http://dx.doi.org/10.1063/1.2772758>
  • Magnusdottir I., Uskov A. V., Bischoff S., Tromborg B., Mørk J.: One- and two-phonon capture processes in quantum dots. J Appl Phys 2002, 92, 5982. <http://dx.doi.org/10.1063/1.1512694>
  • Lehman Susan Y., Roshko Alexana, Mirin Richard P., Bonevich John E.: Investigation of the Shape of InGaAs/GaAs Quantum Dots. Mater Res Soc Proc 2002, 737, E13.40. <http://dx.doi.org/10.1557/PROC-737-E13.40>