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Pure Appl. Chem., 2000, Vol. 72, No. 1-2, pp. 199-207

Distribution and shape of self-assembled InAs quantum dots grown on GaAs (001)

K. Zhang*, J. Falta, Th. Schmidt, Ch. Heyn, G. Materlik and W. Hansen

Institut für Angewandte Physik, Universität Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany

Abstract: Grazing incidence small angle X-ray scattering (GISAXS) and atomic force microscopy (AFM) experiments are employed to study self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on GaAs (001). The GISAXS spectra show pronounced non-specular diffuse scattering satellite peaks with high diffraction orders up to ±3 along [110], [1-10], and [100] sample azimuthal orientations with respect to the incoming beam, indicating a lateral ordering of the InAs QDs. The correlation lengths of the lateral dot distribution are found to be identical along [110] and [1-10] but smaller along [100] direction. The ratio of the mean dot-dot distances along [100] and [1-10] azimuths is determined to be 1.13, indicating the anisotropic ordering of QD distribution. Broad diffraction peaks are observed at larger scattering angles and associated to dot facet crystal truncation rods (CTR). We determine {111}-like facets along [110] and [1-10] sample azimuths, and {101}-like facets along [100] azimuth.