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Pure Appl. Chem., 2012, Vol. 84, No. 4, pp. 979-989

Published online 2012-03-19

A programmable single-component diode based on an ambipolar organic field-effect transistor (OFET)

Tadashi Sugawara1*, Takuro Itoh1, Kentaro Suzuki1, Hiroyuki Higuchi2 and Michio M. Matsushita3

1 Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro, Tokyo 153-8902, Japan
2 Department of Chemistry, Faculty of Science, Toyama University, 3190 Gofuku, Toyama 930‑8555, Japan
3 Department of Chemistry, Nagoya University, Chikusa-ku, Nagoya 464-8602, Japan

Abstract: An ambipolar field-effect transistor (FET) based on tetracyanoquarterthienoquinoid (TCT4Q) was constructed. When a set of source, drain, and gate voltages were applied to a thin film of TCT4Q at temperatures lower than 150 K, both positive and negative carriers were trapped and frozen even after removal of the gate voltage. The frozen carriers worked as a floating gate with the gradient by creating a PN(NP) junction through the injection of oppositely charged “mobile” carriers. The device exhibited a distinct rectifying effect when an alternating current (50 < f <500 mHz) was applied through the source and drain electrodes. Moreover, the function of the molecular device is programmable and erasable.