Pure and Applied Chemistry

Abstract: An ambipolar field-effect transistor (FET) based on tetracyanoquarterthienoquinoid (TCT₄Q) was constructed. When a set of source, drain, and gate voltages were applied to a thin film of TCT₄Q at temperatures lower than 150 K, both positive and negative carriers were trapped and frozen even after removal of the gate voltage. The frozen carriers worked as a floating gate with the gradient by creating a PN(NP) junction through the injection of oppositely charged “mobile” carriers. The device exhibited a distinct rectifying effect when an alternating current (50 < f <500 mHz) was applied through the source and drain electrodes. Moreover, the function of the molecular device is programmable and erasable.