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Pure Appl. Chem., 2010, Vol. 82, No. 11, pp. 2185-2198

Published online 2010-08-01

One-dimensional inorganic semiconductor nanostructures: A new carrier for nanosensors

Xiaosheng Fang1*, Linfeng Hu1*, Changhui Ye2 and Lide Zhang2

1 Department of Materials Science, Fudan University, Shanghai 200433, China
2 Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

Abstract: One-dimensional (1D) inorganic semiconductor nanostructures have witnessed an explosion of interest over the last decade because of advances in their controlled synthesis and unique property and potential applications. A wide range of gases, chemicals, biomedical nanosensors, and photodetectors have been assembled using 1D inorganic semiconductor nanostructures. The high-performance characteristics of these nanosensors are particularly attributable to the inorganic semiconducting nanostructure high surface-to-volume ratio (SVR) and its rationally designed surface. In this review, we provide a brief summary of the state-of-the-art research activities in the field of 1D inorganic semiconductor nanostructure-based nanosensors. Some perspectives and the outlook for future developments in this area are presented.