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Pure Appl. Chem., 2010, Vol. 82, No. 11, pp. 2017-2025

Published online 2010-08-02

Possibilities of Monte Carlo simulation for examination of nanowhisker growth

Alla G. Nastovjak, Igor G. Neizvestny and Nataliya L. Shwartz*

Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia

Abstract: The kinetic Monte Carlo (MC) model of nanowhisker (NW) growth is suggested. Two variants of growth are possible in the model—molecular beam epitaxy (MBE) and chemical vapor deposition (CVD). The effect of deposition conditions and growth regimes on the whisker morphology was examined within the framework of the vapor–liquid–solid (VLS) mechanism. A range of model growth conditions corresponding to NW and nanotube formation was determined. The suggested MC model was used for analyses of the morphology of the catalyst–whisker interface and for examination of Si–Ge whisker growth.