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Pure Appl. Chem., 2008, Vol. 80, No. 10, pp. 2141-2150

http://dx.doi.org/10.1351/pac200880102141

Nanocrystalline silicon carbide films for solar photovoltaics: The role of dangling-bond defects

Koeng Su Lim1 and Oleg Shevaleevskiy1,2

1 School of Electrical Engineering and Computer Science, KAIST, Daejeon 307-701, Republic of Korea
2 Solar Energy Conversion Laboratory, Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, Kosygin St. 4, Moscow 119334, Russia

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  • Manassen Y., Averbukh M., Morgenstern M.: Analyzing multiple encounter as a possible origin of electron spin resonance signals in scanning tunneling microscopy on Si(111) featuring C and O defects. Surface Science 2014, 623, 47. <http://dx.doi.org/10.1016/j.susc.2013.12.009>
  • Zhang Yanwen, Ishimaru Manabu, Varga Tamas, Oda Takuji, Hardiman Chris, Xue Haizhou, Katoh Yutai, Shannon Steven, Weber William J.: Nanoscale engineering of radiation tolerant silicon carbide. Phys. Chem. Chem. Phys. 2012, 14, 13429. <http://dx.doi.org/10.1039/c2cp42342a>
  • Shalav Avi: Photovoltaics literature survey (No. 68). Prog Photovolt Res Appl 2009, 17, 151. <http://dx.doi.org/10.1002/pip.882>