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Pure Appl. Chem., 2005, Vol. 77, No. 2, pp. 391-398

http://dx.doi.org/10.1351/pac200577020391

Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition

Kosuke Takenaka, Masaharu Shiratani, Manabu Takeshita, Makoto Kita, Kazunori Koga and Yukio Watanabe

Department of Electronics, Kyushu University, Fukuoka, Japan

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  • Ham Y-H, Kim D-P, Baek K-H, Park K-S, Kwon K-H, Do L-M: Analysis of a metal filling and liner formation mechanism of the blind via with nano-Ag particles for TSV (through silicon via) interconnection. J. Micromech. Microeng. 2012, 22, 075013. <http://dx.doi.org/10.1088/0960-1317/22/7/075013>
  • Ham Yong-Hyun, Kim Dong-Pyo, Baek Kyu-Ha, Park Kun-Sik, Kim Moonkeun, Kwon Kwang-Ho, Lee Kijun, Do Lee-Mi: Metal∕Dielectric Liner Formation by a Simple Solution Process for through Silicon via Interconnection. Electrochem Solid State 2012, 15, H145. <http://dx.doi.org/10.1149/2.esl113678>
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  • Umetsu Jun, Koga Kazunori, Inoue Kazuhiko, Matsuzaki Hidefumi, Takenaka Kosuke, Shiratani Masaharu: Discharge power dependence of Hα intensity and electron density of Ar+H2 discharges in H-assisted plasma CVD reactor. Surface Coatings and Technology 2008, 202, 5659. <http://dx.doi.org/10.1016/j.surfcoat.2008.06.108>
  • Umetsu J, Inoue K, Koga K, Shiratani M: Optical emission spectroscopic study on H-assisted plasma for anisotropic deposition of Cu films. J Phys Conf Ser 2008, 100, 062007. <http://dx.doi.org/10.1088/1742-6596/100/6/062007>