Pure and Applied Chemistry

CrossRef Cited-by Linking

• Li Rui, Chen Xiping, Chen Yongsheng, Hao Xiuli, Lu Jingxiao, Yang Shi-e: Modeling the effect of power on the growth properties of microcrystalline silicon films in the high-pressure depletion regime. Thin Solid Films 2014. <http://dx.doi.org/10.1016/j.tsf.2014.04.001>
• Gope Jhuma, Kumar Sushil, Sudhakar S., Lodhi Kalpana, Rauthan C.M.S., Srivastava P.C.: Influence of argon dilution on the growth of amorphous to ultra nanocrystalline silicon films using VHF PECVD process. Journal of Alloys and Compounds 2013, 577, 710. <http://dx.doi.org/10.1016/j.jallcom.2013.05.142>
• Gope Jhuma, Kumar Sushil, Sudhakar S., Rauthan C.M.S., Srivastava P.C.: Effect of silane flow rate on structural, electrical and optical properties of silicon thin films grown by VHF PECVD technique. Materials Chemistry and Physics 2013, 141, 89. <http://dx.doi.org/10.1016/j.matchemphys.2013.04.028>
• Ogiwara Kohei, Chen Weiting, Uchino Kiichiro, Kawai Yoshinobu: Simulation of Effective Production of Very High Frequency Hydrogen Plasma Using a Balanced Power Feeding Method. Jpn. J. Appl. Phys. 2013, 52, 11ND01. <http://dx.doi.org/10.7567/JJAP.52.11ND01>
• Nemeth Bill, Zhang Xiaodan, Yan Yanfa, Wang Qi: EFFECTS OF INTERELECTRODE SPACING ON THE PROPERTIES OF MICROCRYSTALLINE SILICON ABSORBER AND SOLAR CELLS. MRS Proc. 2012, 1426. <http://dx.doi.org/10.1557/opl.2012.1095>
• Strahm B, Howling A A, Sansonnens L, Hollenstein Ch: Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH₄/H₂ discharges. Plasma Sources Sci Technol 2007, 16, 80. <http://dx.doi.org/10.1088/0963-0252/16/1/011>
• Strahm B., Howling A. A., Sansonnens L., Hollenstein Ch.: Optimization of the microcrystalline silicon deposition efficiency. J Vac Sci Technol A 2007, 25, 1198. <http://dx.doi.org/10.1116/1.2433985>