Pure and Applied Chemistry

CrossRef Cited-by Linking

• Schwab Christoph, Hofmann Marc, Heller Rene, Seiffe Johannes, Rentsch Jochen, Preu Ralf: Effects of high-temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation. Phys. Status Solidi A 2013, 210, 2399. <http://dx.doi.org/10.1002/pssa.201329308>
• Sánchez E., Carreras A.C., Guereschi A.B., Martino R.D., Castellano G.: Wavelength-dispersive spectral analysis and quantification of monazites by electron-probe microanalysis. ATOM SPECTROSC 2011, 66, 67. <http://dx.doi.org/10.1016/j.sab.2010.12.004>
• Saci Lynda, Mahamdi Ramdane, Mansour Farida, Boucher Jonathan, Collet Maéva, Bedel Pereira Eléna, Temple-Boyer Pierre: Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films. Jpn J Appl Phys (Part 1) 2011, 50, 051301. <http://dx.doi.org/10.1143/JJAP.50.051301>
• Saci Lynda, Mahamdi Ramdane, Mansour Farida, Boucher Jonathan, Collet Maéva, Pereira Eléna Bedel, Temple-Boyer Pierre: Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films. Jpn. J. Appl. Phys. 2011, 50, 051301. <http://dx.doi.org/10.7567/JJAP.50.051301>
• Dupuis J., Fourmond E., Ballutaud D., Bererd N., Lemiti M.: Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition. This Solid Films 2010, 519, 1325. <http://dx.doi.org/10.1016/j.tsf.2010.09.036>
• Tian Jingze, Zuo Biao, Lu Wei, Zhou Meisheng, Hsia Liang Choo: Stress Modulation of Silicon Nitride Film by Initial Deposition Conditions for Transistor Carrier Mobility Enhancement. Jpn J Appl Phys 2010, 49, 05FB01. <http://dx.doi.org/10.1143/JJAP.49.05FB01>
• Murata Tatsunori, Miyagawa Yoshihiro, Matsuura Masazumi, Asai Koyu, Miyatake Hiroshi: Effect of N₂ Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH₄–NH₃–N₂–He Gas Mixture on Stress Relaxation of Silicon Nitride. Jpn J Appl Phys 2010, 49, 08JF08. <http://dx.doi.org/10.1143/JJAP.49.08JF08>
• Liu Yan, Lin I.-Kuan, Zhang Xin: Mechanical properties of sputtered silicon oxynitride films by nanoindentation. Mater Sei Eng A 2008, 489, 294. <http://dx.doi.org/10.1016/j.msea.2008.01.063>
• Dupuis J., Fourmond E., Lelièvre J.F., Ballutaud D., Lemiti M.: Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation. This Solid Films 2008, 516, 6954. <http://dx.doi.org/10.1016/j.tsf.2007.12.026>
• Kaindl R., Sartory B., Neidhardt J., Franz R., Reiter A., Polcik P., Tessadri R., Mitterer C.: Semi-quantitative chemical analysis of hard coatings by Raman micro-spectroscopy: the aluminium chromium nitride system as an example. Anal Bioanal Chem 2007, 389, 1569. <http://dx.doi.org/10.1007/s00216-007-1540-4>
• Miyagawa Yoshihiro, Murata Tatsunori, Nishida Yukio, Nakai Takehiro, Uedono Akira, Hattori Nobuyoshi, Matsuura Masazumi, Asai Koyu, Yoneda Masahiro: Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices . Jpn J Appl Phys 2007, 46, 1984. <http://dx.doi.org/10.1143/JJAP.46.1984>
• Dreer Sabine, Wilhartitz Peter, Sartory Bernhard, Tessadri Richard, Piplits Kurt, Mayerhofer Karl Emanuel: Accurate Determination of Trace Amounts of Oxygen in CrAlN Hard Coatings by a Combination of WDS–EPMA and SIMS. Microchim Acta 2006, 155, 125. <http://dx.doi.org/10.1007/s00604-006-0529-6>
• Jehanathan Neerushana, Liu Yinong, Walmsley Byron, Dell John, Saunders Martin: Effect of oxidation on the chemical bonding structure of PECVD SiN[sub x] thin films. J Appl Phys 2006, 100, 123516. <http://dx.doi.org/10.1063/1.2402581>