Pure Appl. Chem., 2002, Vol. 74, No. 3, pp. 489-492
http://dx.doi.org/10.1351/pac200274030489
How to exploit ion-induced stress relaxation to grow thick c-BN films
Abstract:
A recently developed procedure is reviewed allowing thick (>1 mm), high-quality c-BN films (>80 % c-BN) to be grown. It is based on the observation that compressive stress inevitably present in such films can be released by medium-energy (some hundred keV) ion irradiation without destroying the cubic phase.