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Pure Appl. Chem., 2002, Vol. 74, No. 3, pp. 401-405

Role of ions in SiO2 deposition with pulsed and continuous helicon plasmas

Christine Charles

Plasma Research Laboratory, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia

Abstract: Good-quality silicon dioxide films have been deposited at low temperature (200 °C) using continuous and pulsed oxygen/silane plasmas coupled in a high-density, low-pressure helicon reactor. Although the total ion flux determines many of the structural properties of the deposited oxide, we have found that silicon-containing ions contribute to the film growth (up to 50 %) and appear to be responsible for the measured compressive stress.