Pure and Applied Chemistry

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• Cao Tengfei, Zhang Haibao, Yan Binhang, Cheng Yi: High rate deposition of nanocrystalline silicon by thermal plasma enhanced CVD. RSC Adv. 2013, 3, 20157. <http://dx.doi.org/10.1039/c3ra43481h>
• K. Kishor Kumar, Couëdel L., Arnas C.: Growth of tungsten nanoparticles in direct-current argon glow discharges. Phys. Plasmas 2013, 20, 043707. <http://dx.doi.org/10.1063/1.4802809>
• Moreno M., Torres A., Ambrosio R., Rosales P., Heredia A., Kosarev A., Torres E., Reyes-Betanzo C., Zuñiga C.: Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors. Journal of Non-Crystalline Solids 2012, 358, 2336. <http://dx.doi.org/10.1016/j.jnoncrysol.2012.01.047>
• Moreno M., Torres A., Ambrosio R., Rosales P., Heredia A., Kosarev A., Torres E., Zuñiga C., Reyes-Betanzo C., Domínguez M.: Deposition and characterization of polymorphous germanium films prepared by low frequency PECVD. Journal of Non-Crystalline Solids 2012, 358, 2099. <http://dx.doi.org/10.1016/j.jnoncrysol.2012.01.061>
• Cattoni A., Talneau A., Haghiri-Gosnet A.M., Girard J., Sentenac A.: Extremely thin planarized grating for sub-diffraction (<100nm) far-field optical imaging of living cell membranes. Microelectronic Engineering 2012, 97, 154. <http://dx.doi.org/10.1016/j.mee.2012.02.038>
• Moreno M., Torres A., Ambrosio R., Torres E., Rosales P., Zuñiga C., Reyes-Betanzo C., Calleja W., De la Hidalga J., Monfil K.: Study of polymorphous silicon as thermo-sensing film for infrared detectors. Materials Science and Engineering: B 2012, 177, 756. <http://dx.doi.org/10.1016/j.mseb.2012.02.002>
• Filonovich Sergej Alexandrovich, Águas Hugo, Busani Tito, Vicente António, Araújo Andreia, Gaspar Diana, Vilarigues Marcia, Leitão Joaquim, Fortunato Elvira, Martins Rodrigo: Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3. Sci. Technol. Adv. Mater. 2012, 13, 045004. <http://dx.doi.org/10.1088/1468-6996/13/4/045004>
• Moreno M., Torres A., Ambrosio R., Zuñiga C., Torres-Rios A., Monfil K., Rosales P., Itzmoyotl A.: Study of the effect of the deposition parameters on the structural, electric and optical characteristics of polymorphous silicon films prepared by low frequency PECVD. Mater Sci & Eng B 2011, 176, 1373. <http://dx.doi.org/10.1016/j.mseb.2011.01.022>
• Bouchat Virginie, Feron Olivier, Gallez Bernard, Masereel Bernard, Michiels Carine, Borght Thierry Vander, Lucas Stéphane: Carbon nanoparticles synthesized by sputtering and gas condensation inside a nanocluster source of fixed dimension. Surface and Coatings Technology 2011, 205, S577. <http://dx.doi.org/10.1016/j.surfcoat.2011.03.055>
• Darwich R., Cabarrocas P. Roca i: High deposition rate hydrogenated polymorphous silicon characterized by different capacitance techniques. Thin Solid Film 2011, 519, 5364. <http://dx.doi.org/10.1016/j.tsf.2011.02.038>
• Belmonte T, Arnoult G, Henrion G, Gries T: Nanoscience with non-equilibrium plasmas at atmospheric pressure. J Phys D Appl Phys 2011, 44, 363001. <http://dx.doi.org/10.1088/0022-3727/44/36/363001>
• Chiou Uio-Pu, Shieh Jia-Min, Pan Fu-Ming, Huang Wen-Hsien: Photovoltaic Performance of HWCVD Deposited μc-Si:H Solar Cells Using Graded Hydrogen Dilution Window-Layer. Electrochemical Society 2011, 158, H1017. <http://dx.doi.org/10.1149/1.3622290>
• Tsai Jeff T.H., Lin Tsung-Ying, Chua Daniel H.C.: Low-temperature fabrication of nanocrystalline silicon thin films on mechanically flexible substrates by vacuum arc discharge. J Mater Res 2011, 26, 1076. <http://dx.doi.org/10.1557/jmr.2011.48>
• Chowdhury Amartya, Mukhopadhyay Sumita, Ray Swati: Effect of electrode separation on PECVD deposited nanocrystalline silicon thin film and solar cell properties. Solar Energy Mater Solar Cells 2010, 94, 1522. <http://dx.doi.org/10.1016/j.solmat.2010.01.017>
• Hadjadj A., Pham N., Roca i Cabarrocas P., Jbara O., Djellouli G.: Ellipsometry investigation of the amorphous-to-microcrystalline transition in a-Si:H under hydrogen-plasma treatment. J Appl Phys 2010, 107, 083509. <http://dx.doi.org/10.1063/1.3393273>
• Martins R., Raniero L., Pereira L., Costa† D., Águas H., Pereira S., Silva L., Gonçalves A., Ferreira I., Fortunato E.: Nanostructured silicon and its application to solar cells, position sensors and thin film transistors. Philos Mag 2009, 89, 2699. <http://dx.doi.org/10.1080/14786430902886910>
• Mukhopadhyay Sumita, Ray Swati, Chowdhury Amartya: Effect of gas flow rates on PECVD-deposited nanocrystalline silicon thin film and solar cell properties. Solar Energy Mater Solar Cells 2008, 92, 385. <http://dx.doi.org/10.1016/j.solmat.2007.09.013>
• Roca i Cabarrocas P., Nath Madhumita, Chatterjee P., Damon-Lacoste J.: Criteria for improved open-circuit voltage in a-Si:H(N)∕c-Si(P) front heterojunction with intrinsic thin layer solar cells. J Appl Phys 2008, 103, 034506. <http://dx.doi.org/10.1063/1.2838459>
• Cheng Qijin, Xu S, Long J D, Ni Z H, Rider A E, Ostrikov K: High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas. J Phys D Appl Phys 2008, 41, 055406. <http://dx.doi.org/10.1088/0022-3727/41/5/055406>
• Roca i Cabarrocas P, Djeridane Y, Nguyen-Tran Th, Johnson E V, Abramov A, Zhang Q: Low temperature plasma synthesis of silicon nanocrystals: a strategy for high deposition rate and efficient polymorphous and microcrystalline solar cells. Plasma Phys Control Fusion 2008, 50, 124037. <http://dx.doi.org/10.1088/0741-3335/50/12/124037>
• Kumar Sushil, Dixit P N, Rauthan C M S, Parashar A, Gope Jhuma: Effect of power on the growth of nanocrystalline silicon films. J Phys Condens Matter 2008, 20, 335215. <http://dx.doi.org/10.1088/0953-8984/20/33/335215>
• Jubault Marie, Pulpytel Jerome, Cachet Hubert, Boufendi Laifa, Arefi-Khonsari Farzaneh: Deposition of SnO2:F Thin Films on Polycarbonate Substrates by PECVD for Antifouling Properties. Plasma Process Polym 2007, 4, S330. <http://dx.doi.org/10.1002/ppap.200730903>
• Nayak B.K., Gupta M.C.: Femtosecond-laser-induced-crystallization and simultaneous formation of light trapping microstructures in thin a-Si:H films. Appl Phys A 2007, 89, 663. <http://dx.doi.org/10.1007/s00339-007-4268-2>
• Mani Radhika C., Pavel Ioana, Aydil Eray S.: Deposition of nanocrystalline silicon films at room temperature. J Appl Phys 2007, 102, 043305. <http://dx.doi.org/10.1063/1.2770824>
• Smets A. H. M., Kessels W. M. M., van de Sanden M. C. M.: The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition. J Appl Phys 2007, 102, 073523. <http://dx.doi.org/10.1063/1.2786873>
• Ishihara Osamu: Complex plasma: dusts in plasma. J Phys D Appl Phys 2007, 40, R121. <http://dx.doi.org/10.1088/0022-3727/40/8/R01>
• Martins N., Canhola P., Quintela M., Ferreira I., Raniero L., Fortunato E., Martins R.: Performances of an in-line PECVD system used to produce amorphous and nanocrystalline silicon solar cells. This Solid Films 2006, 511-512, 238. <http://dx.doi.org/10.1016/j.tsf.2005.12.001>
• Chaa^bane Nihed, Suendo Veinardi, Vach Holger, Roca i Cabarrocas Pere: Soft landing of silicon nanocrystals in plasma enhanced chemical vapor deposition. Appl Phys Lett 2006, 88, 203111. <http://dx.doi.org/10.1063/1.2204439>
• Leparoux M., Schreuders C., Shin J.-W., Siegmann S.: Induction Plasma Synthesis of Carbide Nano-Powders. Adv Eng Mater 2005, 7, 349. <http://dx.doi.org/10.1002/adem.200500046>
• Lin C. Y., Fang Y. K., Chen S. F., Lin C. S., Chou T. H., Hwang S. B., Hwang J. S., Lin K. I.: Investigation of structure and properties of nanocrystalline silicon on various buffer layers. J Electron Mater 2005, 34, 1123. <http://dx.doi.org/10.1007/s11664-005-0240-0>
• Vach Holger, Brulin Quentin: Controlled Growth of Silicon Nanocrystals in a Plasma Reactor. Phys Rev Letters 2005, 95, 165502. <http://dx.doi.org/10.1103/PhysRevLett.95.165502>
• Águas H., Raniero L., Pereira L., Fortunato E., Martins R.: Effect of the discharge frequency and impedance on the structural properties of polymorphous silicon. This Solid Films 2004, 451-452, 264. <http://dx.doi.org/10.1016/j.tsf.2003.11.020>
• Franta Daniel, Ohlı́dal Ivan, Klapetek Petr, Roca i Cabarrocas Pere: Complete characterization of rough polymorphous silicon films by atomic force microscopy and the combined method of spectroscopic ellipsometry and spectroscopic reflectometry. This Solid Films 2004, 455-456, 399. <http://dx.doi.org/10.1016/j.tsf.2003.11.237>
• Lebib S., P. Roca i Cabarrocas: Structure and hydrogen bonding in plasma deposited polymorphous silicon thin films. Eur Phys J AP 2004, 26, 17. <http://dx.doi.org/10.1051/epjap:2004018>
• Cabarrocas Pere Roca i, Chaâbane N, Kharchenko A V, Tchakarov S: Polymorphous silicon thin films produced in dusty plasmas: application to solar cells. Plasma Phys Control Fusion 2004, 46, B235. <http://dx.doi.org/10.1088/0741-3335/46/12B/020>
• Fontcuberta i Morral A., Roca i Cabarrocas P., Clerc C.: Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements. Phys Rev B 2004, 69, 125307. <http://dx.doi.org/10.1103/PhysRevB.69.125307>
• Kharchenko A.V., Suendo V., Roca i Cabarrocas P.: Plasma studies under polymorphous silicon deposition conditions. This Solid Films 2003, 427, 236. <http://dx.doi.org/10.1016/S0040-6090(02)01188-4>
• Poissant Y., Chatterjee P., Roca i Cabarrocas P.: Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling. J Appl Phys 2003, 94, 7305. <http://dx.doi.org/10.1063/1.1623610>
• Bhandarkar Upendra, Kortshagen Uwe, Girshick Steven L: Numerical study of the effect of gas temperature on the time for onset of particle nucleation in argon–silane low-pressure plasmas. J Phys D Appl Phys 2003, 36, 1399. <http://dx.doi.org/10.1088/0022-3727/36/12/307>
• Chaâbane Nihed, Kharchenko Andriy V, Vach Holger, Cabarrocas Pere Roca i: Optimization of plasma parameters for the production of silicon nano-crystals. New J Phys 2003, 5, 37. <http://dx.doi.org/10.1088/1367-2630/5/1/337>
• Roca i Cabarrocas P: Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics. Curr Opin Solid State Mater 2002, 6, 439. <http://dx.doi.org/10.1016/S1359-0286(02)00112-2>
• Gueunier M. E., Kleider J. P., Brüggemann R., Lebib S., Roca i Cabarrocas P., Meaudre R., Canut B.: Properties of polymorphous silicon–germanium alloys deposited under high hydrogen dilution and at high pressure. J Appl Phys 2002, 92, 4959. <http://dx.doi.org/10.1063/1.1508429>