Pure Appl. Chem., 1996, Vol. 68, No. 5, pp. 1143-1149
http://dx.doi.org/10.1351/pac199668051143
Plasma deposition of amorphous silicon alloys from fluorinated gases
CrossRef Cited-by Linking
- Sennikov P. G., Golubev S. V., Kornev R. A., Mochalov L. A., Shilaev A. A.: A study of silicon tetrafluoride reduction with hydrogen in radiofrequency discharge. High Energy Chem 2014, 48, 49. <http://dx.doi.org/10.1134/S0018143914010123>
- Chen X., Lu X., He P., Zhao C., Sun W., Zhang P., Gou F.: Deposition and Etching of SiF2 on Si Surface: MD Study. Physics Procedia 2012, 32, 885. <http://dx.doi.org/10.1016/j.phpro.2012.03.652>
- Sennikov P. G., Golubev S. V., Shashkin V. I., Pryakhin D. A., Drozdov M. N., Andreev B. A., Drozdov Yu. N., Kuznetsov A. S., Pohl H. -J.: Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride. JETP Lett 2009, 89, 73. <http://dx.doi.org/10.1134/S0021364009020052>
- Williams Keri L., Butoi Carmen I., Fisher Ellen R.: Mechanisms for deposition and etching in fluorosilane plasma processing of silicon. J Vac Sci Technol A 2003, 21, 1688. <http://dx.doi.org/10.1116/1.1595109>
- Williams Keri L., Martin Ina T., Fisher Ellen R.: On the importance of ions and ion-molecule reactions to plasma-surface interface reactions. j am soc mass spectrom 2002, 13, 518. <http://dx.doi.org/10.1016/S1044-0305(02)00371-9>
- Cicala G., Capezzuto P., Bruno G., Schiavulli L., Amato G.: Plasma deposition of amorphous SiC:H,F alloys from SiF4-CH4-H2 mixtures under modulated conditions. J Appl Phys 1996, 79, 8856. <http://dx.doi.org/10.1063/1.362473>
- Cicala G., Bruno G., Capezzuto P., Favia P.: Photoelectron spectroscopy study of amorphous silicon-carbon alloys deposited by plasma-enhanced chemical vapor deposition. J Mater Res 1996, 11, 3017. <http://dx.doi.org/10.1557/JMR.1996.0383>