Pure and Applied Chemistry, 1996, Volume 68, No. 5, pp. 1071-1074, Cited by

Pure Appl. Chem., 1996, Vol. 68, No. 5, pp. 1071-1074

http://dx.doi.org/10.1351/pac199668051071

Surface chemistry during plasma etching of silicon

V. M. Donnelly, I. P. Herman, C. C. Cheng and K. V. Guinn

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Bogart K. H. A., Donnelly V. M.: Composition of trench sidewalls and bottoms for SiO[sub 2]-masked Si(100) etched in Cl[sub 2] plasmas. J Appl Phys 2000, 87, 8351. <http://dx.doi.org/10.1063/1.373547>
Bogart K. H. A., Donnelly V. M.: On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching. J Appl Phys 1999, 86, 1822. <http://dx.doi.org/10.1063/1.370975>