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Pure Appl. Chem., 1996, Vol. 68, No. 5, pp. 1011-1015

Future prospects for dry etching

K. Suzuki and Naoshi Itabashi

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  • Fanara C., Shore P., Nicholls J.R., Lyford N., Kelley J., Carr J., Sommer P.: A New Reactive Atom Plasma Technology (RAPT) for Precision Machining: the Etching of ULEĀ® Surfaces. Adv Eng Mater 2006, 8, 933. <>
  • Zeze D.A., Carey J.D., Stolojan V., Weiss B.L., Silva S.R.P.: Damage effects in Pyrex by CF4 reactive ion etching in dual RF-microwave plasmas. Micro Nano Lett 2006, 1, 103. <>
  • Schenkel T., Hamza A.V., Barnes A.V., Schneider D.H.: Interaction of slow, very highly charged ions with surfaces. Prog Surf Sci 1999, 61, 23. <>
  • Hattass M., Schenkel T., Hamza A., Barnes A., Newman M., McDonald J., Niedermayr T., Machicoane G., Schneider D.: Charge Equilibration Time of Slow, Highly Charged Ions in Solids. Phys Rev Letters 1999, 82, 4795. <>
  • Goodman Rory S., Materer N., Leone Stephen R.: Ion-enhanced etching of Si(100) with molecular chlorine: Reaction mechanisms and product yields. J Vac Sci Technol A 1999, 17, 3340. <>
  • Schenkel T., Hamza A., Barnes A., Schneider D., Banks J., Doyle B.: Ablation of GaAs by Intense, Ultrafast Electronic Excitation from Highly Charged Ions. Phys Rev Letters 1998, 81, 2590. <>