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Pure Appl. Chem., 1994, Vol. 66, No. 6, pp. 1353-1362

Decomposition of gaseous dielectrics (CF4,SF6) by a non-equilibrium plasma. Mechanisms, kinetics, mass spectrometric studies and interactions with polymeric targets

Y. Khairallah, F. Khonsari-Arefi and J. Amouroux

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  • Saloum S, Akel M, Alkhaled B: Diagnostic and processing in SF6 RF remote plasma for silicon etching. J Phys D Appl Phys 2009, 42, 175206. <>
  • Chaivan P., Pasaja N., Boonyawan D., Suanpoot P., Vilaithong T.: Low-temperature plasma treatment for hydrophobicity improvement of silk. Surface Coatings and Technology 2005, 193, 356. <>
  • Riccardi C, Barni R, Fontanesi M, Marcandalli B, Massafra M, Selli E, Mazzone G: Plasma Sources Sci Technol 2001, 10, 92. <>
  • Huang Aimin, Xia Guanguang, Spiess Franz-Josef, Chen Xiao, Rozak Jeffery, Suib Steven L., Takahashi Tomonori, Hayashi Yuji, Matsumoto Hiroshige: Combination of glow-discharge and arc plasmas for CF4 abatement. Res. Chem. Intermed. 2001, 27, 957. <>
  • Caputo M.C., Ferraro M.B., Lazzeretti P., Courtot A., Defranceschi M., Berthier G., Fuentealba P.: Theoretical study of the magnetic properties of an SF6 molecule in non-uniform magnetic field. Journal of Molecular Structure: THEOCHEM 1997, 390, 47. <>
  • Foest R., Olthoff J., Van Brunt R., Benck E., Roberts J.: Optical and mass spectrometric investigations of ions and neutral species in SF_{6} radio-frequency discharges. Phys Rev E 1996, 54, 1876. <>
  • Leonard D., Bertrand P., Scheuer A., Prat R., Hommet J., Le Moigne J., Deville J.P.: Time-of-flight SIMS and in-situ XPS study of O2 and O2-N2 post-discharge microwave plasma-modified high-density polyethylene and hexatriacontane surfaces. Journal of Adhesion Science and Technology 1996, 10, 1165. <>
  • Khairallah-Abdelnour Y., Arefi-Khonsari F., Amouroux J., Léonard D., Bertrand P.: Time-of-flight secondary ion mass spectrometry (ToF-SIMS) study of SF6 and SF6-CF4 plasma-treated low-density polyethylene films. Surf Interface Anal 1995, 23, 467. <>