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Pure Appl. Chem., 1994, Vol. 66, No. 6, pp. 1327-1334

http://dx.doi.org/10.1351/pac199466061327

Electron cyclotron resonance plasma etching of Si with Cl2: Plasma chemistry and mechanisms

K. Ono, M. Tuda, H. Ootera and T. Oomori

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  • Zhang Mingwu, Cai Xiaohong, Larson Åsa, Orel Ann E.: Theoretical study of dissociative recombination of Cl_{2}^{+}. Gen Phys 2011, 84, 052707. <http://dx.doi.org/10.1103/PhysRevA.84.052707>
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  • ONO Kouichi: Various Phenomena on PSI. PSI in Plasma Processing Devices. Plasma Etching. J Plasma Fusion Res 1999, 75, 350. <http://dx.doi.org/10.1585/jspf.75.350>
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  • Donnelly V. M.: Mass spectrometric measurements of neutral reactant and product densities during Si etching in a high-density helical resonator Cl2 plasma. J Appl Phys 1996, 79, 9353. <http://dx.doi.org/10.1063/1.362613>