Pure and Applied Chemistry, 1988, Volume 60, No. 5, pp. 703-708, Cited by

Pure Appl. Chem., 1988, Vol. 60, No. 5, pp. 703-708

http://dx.doi.org/10.1351/pac198860050703

Plasma and gaseous etching of compounds of Groups III-V

D. E. Ibbotson

Dunaev A. V.: Investigation of the GaAs surface after etching in the plasma of mixtures HCl/Ar, HCl/Cl2, and HCl/H2 by atomic-force microscopy. Russ Microelectron 2014, 43, 9. <http://dx.doi.org/10.1134/S1063739714010041>
Vigne S., Munõz J., Delprat S., Margot J., Chaker M.: Plasma etching dynamics of CaxBa1−xNb2O6 (CBN) material. Microelectronic Engineering 2013, 110, 265. <http://dx.doi.org/10.1016/j.mee.2013.01.052>
Haščík Š., Eliáš P., Šoltýs J., Martaus J., Hotový I.: CCl4-based reactive ion etching of semi-insulating GaAs and InP. Czech J Phys 2006, 56, B1169. <http://dx.doi.org/10.1007/s10582-006-0345-6>
Simpson William C., Yarmoff Jory A.: FUNDAMENTAL STUDIES OF HALOGEN REACTIONS WITH III-V SEMICONDUCTOR SURFACES. Ann Rev Phys Chem 1996, 47, 527. <http://dx.doi.org/10.1146/annurev.physchem.47.1.527>
Freedman Andrew: Halogenation of diamond (100) and (111) surfaces by atomic beams. J Appl Phys 1994, 75, 3112. <http://dx.doi.org/10.1063/1.356163>