Pure and Applied Chemistry

CrossRef Cited-by Linking

• d'Agostino Riccardo, Palumbo Fabio: Comment on “Ion-Assisted Processes of Polymerization in Low-Pressure Plasmas”. Plasma Processes Polym. 2012, 9, 844. <http://dx.doi.org/10.1002/ppap.201200072>
• Cuddy Michael F., Blechle Joshua M., Fisher Ellen R.: Ion contributions to gas–surface interactions in inductively-coupled fluorocarbon plasmas. International Journal of Mass Spectrometry 2012, 330-332, 46. <http://dx.doi.org/10.1016/j.ijms.2012.09.006>
• Lewis François, Cloutier Maxime, Chevallier Pascale, Turgeon Stéphane, Pireaux Jean-Jacques, Tatoulian Michael, Mantovani Diego: Influence of the 316 L Stainless Steel Interface on the Stability and Barrier Properties of Plasma Fluorocarbon Films. MATER INTERF 2011, 3, 2323. <http://dx.doi.org/10.1021/am200245d>
• Lewis François, Turgeon Stéphane, Chevallier Pascale, Pireaux Jean-Jacques, Tatoulian Michael, Mantovani Diego: On the Growth of Fluorocarbon Thin Films Deposited on Plasma-Etched 316L Stainless Steel. Plasma Process Polym 2010, 7, 309. <http://dx.doi.org/10.1002/ppap.200900107>
• Cuddy Michael F., Fisher Ellen R.: Investigation of the roles of gas-phase CF[sub 2] molecules and F atoms during fluorocarbon plasma processing of Si and ZrO[sub 2] substrates. J Appl Phys 2010, 108, 033303. <http://dx.doi.org/10.1063/1.3467776>
• HAÏDOPOULOS M., MIRABELLA F., HORGNIES M., VOLCKE C., THIRY P.A., ROUXHET P., PIREAUX J.-J.: Morphology of polystyrene films deposited by RF plasma. J Microsc 2007, 228, 227. <http://dx.doi.org/10.1111/j.1365-2818.2007.01843.x>
• Haïdopoulos Marie, Turgeon Stéphane, Laroche Gaétan, Mantovani Diego: Chemical and Morphological Characterization of Ultra-Thin Fluorocarbon Plasma-Polymer Deposition on 316 Stainless Steel Substrates: A First Step Toward the Improvement of the Long-Term Safety of Coated-Stents. Plasma Process Polym 2005, 2, 424. <http://dx.doi.org/10.1002/ppap.200400066>
• Haïdopoulos M., Turgeon S., Laroche G., Mantovani D.: Surface modifications of 316 stainless steel for the improvement of its interface properties with RFGD-deposited fluorocarbon coating. Surface Coatings and Technology 2005, 197, 278. <http://dx.doi.org/10.1016/j.surfcoat.2004.10.113>
• He Zhenhua, Leung K.T: Vibrational electron energy loss studies of surface processes on Si(111)7×7 and vitreous SiO2 ion-mediated in CF4 and CH2F2. Surf Sei 2003, 523, 48. <http://dx.doi.org/10.1016/S0039-6028(02)02351-8>
• Fujita Kazushi, Hori Masaru, Goto Toshio, Ito Masafumi: Silicon oxide contact hole etching employing an environmentally benign process. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 2002, 20, 2192. <http://dx.doi.org/10.1116/1.1513632>
• He Z: Surface processes on Si(1 1 1)7×7 and SiO2 mediated by low-energy ion irradiation in CF4. Appl Surf Sci 2001, 174, 225. <http://dx.doi.org/10.1016/S0169-4332(01)00175-1>
• Nakamura Masayuki, Hori Masaru, Goto Toshio, Ito Masafumi, Ishii Nobuo: Spatial distributions of the absolute CF and CF[sub 2] radical densities in high-density plasma employing low global warming potential fluorocarbon gases and precursors for film formation. J Vac Sci Technol A 2001, 19, 2134. <http://dx.doi.org/10.1116/1.1376708>
• Denes F., Hua Z. Q., Simonsick W. J., Aaserud D. J.: Synthesis and characterization of Teflon-like macromolecular structures from dodecafluorocyclohexane and octadecafluorodecalin under RF-cold-plasma conditions. J Appl Polym Sci 1999, 71, 1627. <http://dx.doi.org/10.1002/(SICI)1097-4628(19990307)71:10<1627::AID-APP10>3.0.CO;2-D>
• Labelle Catherine B., Gleason Karen K.: Pulsed plasma-enhanced chemical vapor deposition from CH[sub 2]F[sub 2], C[sub 2]H[sub 2]F[sub 4], and CHClF[sub 2]. J Vac Sci Technol A 1999, 17, 445. <http://dx.doi.org/10.1116/1.581604>
• Fujita Kazushi, Ito Masafumi, Hori Masaru, Goto Toshio: Silicon oxide selective etching process keeping harmony with environment by using radical injection technique. J Vac Sci Technol A 1999, 17, 3260. <http://dx.doi.org/10.1116/1.582052>
• Labelle Catherine B., Lau Kenneth K. S., Gleason Karen K.: Pulsed Plasma Enhanced Chemical Vapor Deposition from CH2F2, C2H2F4, and CHCIF2. MRS Proc 1998, 511, 75. <http://dx.doi.org/10.1557/PROC-511-75>
• Lamendola R, Favia P, d'Agostino R: Plasma Sources Sci Technol 1992, 1, 256. <http://dx.doi.org/10.1088/0963-0252/1/4/005>
• Deutsch H., Kersten H., Klagge S., Rutscher A.: On the Temperature Dependence of Plasma Polymerization. Contrib Plasma Phys 1988, 28, 149. <http://dx.doi.org/10.1002/ctpp.2150280206>
• Lunk A., Schmidt M.: Plasma Processes in Activated Thin Film Deposition. Contrib Plasma Phys 1988, 28, 275. <http://dx.doi.org/10.1002/ctpp.2150280310>
• Occhiello E., Garbassi F.: Halofluorocarbon plasma treatments of polystyrene and poly(methyl methacrylate) surfaces. Poly 1988, 29, 2277. <http://dx.doi.org/10.1016/0032-3861(88)90122-X>
• d’Agostino Riccardo, Cramarossa Francesco, Illuzzi Francesca: Mechanisms of deposition and etching of thin films of plasma-polymerized fluorinated monomers in radio frequency discharges fed with C2F6-H2 and C2F6-O2 mixtures. J Appl Phys 1987, 61, 2754. <http://dx.doi.org/10.1063/1.337864>
• Schram D C, Bisschops Th H J, Kroesen G M W, Hoog F J de: Plasma surface modification and plasma chemistry. Plasma Phys Control Fusion 1987, 29, 1353. <http://dx.doi.org/10.1088/0741-3335/29/10A/316>
• Bruno G., Capezzuto P., Cicala G., Cramarossa F.: Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride. Plasma Chem Plasma Process 1986, 6, 109. <http://dx.doi.org/10.1007/BF00571271>
• Haag Christa, Suhr Harald: Etching of metals by means of organic radicals. Plasma Chem Plasma Process 1986, 6, 197. <http://dx.doi.org/10.1007/BF00575128>
• Martinů L.: Deposition and structure of gold-containing plasma-polymerized halocarbon films. This Solid Films 1986, 140, 307. <http://dx.doi.org/10.1016/0040-6090(86)90273-7>