Pure and Applied Chemistry

CrossRef Cited-by Linking

• Ounalli L, Vuilleumier J-L, Schenker D, Vuilleumier J -M: New gas mixtures suitable for rare event detection using a Micromegas-TPC detector. J Inst 2009, 4, P01001. <http://dx.doi.org/10.1088/1748-0221/4/01/P01001>
• Suzuki Atsushi, Nonaka Hidehiko: Measured Gas Concentrations and Flow Properties in SiH₄–H₂ Mixtures . Jpn J Appl Phys 2008, 47, 3661. <http://dx.doi.org/10.1143/JJAP.47.3661>
• Yamada Hiroshi: 1.5-nm-thick silicon oxide gate films grown at 150 °C using modified reactive ion beam deposition with pyrolytic-gas passivation. J Vac Sci Technol A 2007, 25, 340. <http://dx.doi.org/10.1116/1.2699503>
• Karabacak T., Zhao Y.-P., Wang G.-C., Lu T.-M.: Growth front roughening in silicon nitride films by plasma-enhanced chemical vapor deposition. Phys Rev B 2002, 66, 075329. <http://dx.doi.org/10.1103/PhysRevB.66.075329>
• Urashima K., Kostov K.G., Jen-Shih Chang, Okayasa Y., Iwaizumi T., Yoshimura K., Kato T.: Removal of C/sub 2/F/sub 6/ from a semiconductor process flue gas by a ferroelectric packed-bed barrier discharge reactor with an adsorber. IEEE Trans on Ind Applicat 2001, 37, 1456. <http://dx.doi.org/10.1109/28.952521>
• Malcolm N. O. J., Yeager Danny L.: Purely theoretical electron-impact ionization cross-sections of silicon hydrides and silicon fluorides obtained from explicitly correlated methods. J Chem Phys 2000, 113, 8. <http://dx.doi.org/10.1063/1.481768>
• Skrzypkowski Miroslaw P., Gougousi Theodosia, Johnsen Rainer, Golde Michael F.: Measurement of the absolute yield of CO(a [sup 3]Π)+O products in the dissociative recombination of CO[sub 2][sup +] ions with electrons. J Chem Phys 1998, 108, 8400. <http://dx.doi.org/10.1063/1.476267>
• Ali M. A., Kim Y.-K., Hwang W., Weinberger N. M., Rudd M. E.: Electron-impact total ionization cross sections of silicon and germanium hydrides. J Chem Phys 1997, 106, 9602. <http://dx.doi.org/10.1063/1.473842>
• Gougousi Theodosia, Johnsen Rainer, Golde Michael F.: Yield determination of OH(v=0,1) radicals produced by the electron-ion recombination of H[sub 3]O[sup +] ions. J Chem Phys 1997, 107, 2430. <http://dx.doi.org/10.1063/1.474586>
• Geoghegan M, Adams N G, Smith D: J Phys B At Mol Opt Phys 1991, 24, 2589. <http://dx.doi.org/10.1088/0953-4075/24/10/015>
• Veprˇek Stan: Controversies in the suggested mechanisms of plasma-induced deposition of silicon from silane. This Solid Films 1989, 175, 129. <http://dx.doi.org/10.1016/0040-6090(89)90819-5>
• Yamada Hiroshi: Reactive ion-beam deposition and cleaning system. Rev Sci Instrum 1989, 60, 1169. <http://dx.doi.org/10.1063/1.1140280>
• Yamada Hiroshi: Low-temperature surface cleaning method using low-energy reactive ionized species. J Appl Phys 1989, 65, 775. <http://dx.doi.org/10.1063/1.343067>
• Jenichen Arndt, Johansen Hartwig: Chemisorption on the SiO2 and silicon surfaces and the influence of infrared laser excitation. Surf Sei 1988, 203, 143. <http://dx.doi.org/10.1016/0039-6028(88)90200-2>
• Lin Guang Hai, Doyle James R., He Muzhi, Gallagher Alan: Argon sputtering analysis of the growing surface of hydrogenated amorphous silicon films. J Appl Phys 1988, 64, 188. <http://dx.doi.org/10.1063/1.341461>
• Weber M. E., Armentrout P. B.: Energetics and dynamics in the reaction of Si+ with SiF4. Thermochemistry of SiFx and SiF+x (x=1, 2, 3). J Chem Phys 1988, 88, 6898. <http://dx.doi.org/10.1063/1.454387>
• Ryan Keith Ronald, Plumb Ian Carleton: Gas-phase chemistry in the processing of materials for the semiconductor industry. Crit Rev Solid State Mater Sci 1988, 15, 153. <http://dx.doi.org/10.1080/10408438808243737>
• Ensslen K., Vepřek S.: Dominant reaction channels and the mechanism of silane decomposition in a H2-Si(s)-SiH4 glow discharge. Plasma Chem Plasma Process 1987, 7, 139. <http://dx.doi.org/10.1007/BF01019174>
• Kushner Mark J.: On the balance between silylene and silyl radicals in rf glow discharges in silane: The effect on deposition rates of a-Si:H. J Appl Phys 1987, 62, 2803. <http://dx.doi.org/10.1063/1.339411>
• Bruno G., Capezzuto P., Cicala G., Cramarossa F.: Deposition of silicon films from SiCl4 glow discharges: A kinetic model of the surface process. J Appl Phys 1987, 62, 2050. <http://dx.doi.org/10.1063/1.339548>
• Kogoma M., Turban G.: Mechanism of etching and of surface modification of polyimide in RF and LF SF6-O2 discharges. Plasma Chem Plasma Process 1986, 6, 349. <http://dx.doi.org/10.1007/BF00565550>
• Bruno G., Capezzuto P., Cicala G., Cramarossa F.: Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride. Plasma Chem Plasma Process 1986, 6, 109. <http://dx.doi.org/10.1007/BF00571271>
• Picard A, Turban G, Grolleau B: J Phys D Appl Phys 1986, 19, 991. <http://dx.doi.org/10.1088/0022-3727/19/6/014>
• Kushner Mark J.: A Plasma Chemistry and Surface Model for the Deposition of a–Si:H from RF Glow Discharges: A Study of Hydrogen Content. Mater Res Soc Proc 1986, 68, 293. <http://dx.doi.org/10.1557/PROC-68-293>