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Pure Appl. Chem., 2002, Vol. 74, No. 3, pp. 397-400

http://dx.doi.org/10.1351/pac200274030397

Diagnostics of etching plasmas

Jean-Paul Booth

Laboratoire de Physique et Technologie des Plasmas, Ecole Polytechnique, 91128 Palaiseau, France

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  • Lee J. H., Yoon Y. S., Kim M. J.: Non-invasive in situ plasma monitoring of reactive gases using the floating harmonic method for inductively coupled plasma etching application. Rev. Sci. Instrum. 2013, 84, 043502. <http://dx.doi.org/10.1063/1.4799972>
  • Bodart P., Brihoum M., Cunge G., Joubert O., Sadeghi N.: Analysis of pulsed high-density HBr and Cl2 plasmas: Impact of the pulsing parameters on the radical densities. Journal of Appl Phys 2011, 110, 113302. <http://dx.doi.org/10.1063/1.3663443>
  • Gou F., Kleyn A. W., Gleeson M. A.: The application of molecular dynamics to the study of plasma–surface interactions: CF x with silicon. Int Rev Phys Chem 2008, 27, 229. <http://dx.doi.org/10.1080/01442350801928014>
  • Kogelschatz Martin, Cunge Gilles, Sadeghi Nader: Identification of halogen containing radicals in silicon etching plasmas and density measurement by UV broad band absorption spectroscopy. J Phys D Appl Phys 2004, 37, 1954. <http://dx.doi.org/10.1088/0022-3727/37/14/010>
  • Cunge G, Kogelschatz M, Sadeghi N: Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas. Plasma Sources Sci Technol 2004, 13, 522. <http://dx.doi.org/10.1088/0963-0252/13/3/019>
  • SADEGHI Nader: 6. Molecular Spectroscopy Techniques Applied for Processing Plasma Diagnostics. J Plasma Fusion Res 2004, 80, 767. <http://dx.doi.org/10.1585/jspf.80.767>