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Pure Appl. Chem., 1988, Vol. 60, No. 5, pp. 633-644

http://dx.doi.org/10.1351/pac198860050633

Plasma deposition of amorphous silicon films: an overview on some open questions

P. Capezzuto and G. Bruno

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  • Sennikov P. G., Golubev S. V., Shashkin V. I., Pryakhin D. A., Drozdov M. N., Andreev B. A., Drozdov Yu. N., Kuznetsov A. S., Pohl H. -J.: Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride. Semicond 2009, 43, 968. <http://dx.doi.org/10.1134/S1063782609070288>
  • Jamroz P., Zyrnicki W.: Optical emission characteristics of glow discharge in the N2–H2–Sn(CH3)4 and N2–Ar–Sn(CH3)4 mixtures. Surface Coatings and Technology 2006, 201, 1444. <http://dx.doi.org/10.1016/j.surfcoat.2006.02.013>
  • Bruno G., Capezzuto P., Cicala G.: rf glow discharge of SiF4-H2 mixtures: Diagnostics and modeling of the a-Si plasma deposition process. J Appl Phys 1991, 69, 7256. <http://dx.doi.org/10.1063/1.347623>
  • Murri Roberto, Schiavulli Luigi, Bruno Giovanni, Capezzuto Pio, Grillo Gianni: Deposition rate, ion bombardment and gap states density in glow discharge a-Si:H,F films. This Solid Films 1989, 182, 105. <http://dx.doi.org/10.1016/0040-6090(89)90248-4>
  • Gislon R., Messana C.: Programs and perspectives on photovoltaics in Italy. Solar Cells 1989, 26, 73. <http://dx.doi.org/10.1016/0379-6787(89)90068-9>