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Pure Appl. Chem., 1985, Vol. 57, No. 8, pp. 1133-1152

http://dx.doi.org/10.1351/pac198557081133

ANALYTICAL CHEMISTRY DIVISION
COMMISSION ON MICROCHEMICAL TECHNIQUES AND TRACE ANALYSIS

General aspects of trace analytical methods: Part VI. Trace analysis of semiconductor materials - Part A: Bulk analysis

Yu. A. Zolotov and M. Grasserbauer

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  • Köhler M., Harms A.V., Alber D.: Determination of Zn in high-purity GaAs with neutron activation analysis. Appl Radiat Isot 2000, 53, 197. <http://dx.doi.org/10.1016/S0969-8043(00)00133-0>
  • Verheijke M. L., Jaspers H. J. J., Hanssen J. M. G.: Neutron activation analysis of very pure silicon wafers. J Radioanal Nucl Chem Articles 1989, 131, 197. <http://dx.doi.org/10.1007/BF02046623>
  • Headridge J.B., Johnson D., Jackson K.W., Roberts J.A.: Determination of antimony dopant and some ultra-trace elements in semiconductor silicon by atomic absorption spectrometry with introduction of solid samples into the furnace. Analytica Chimica Acta 1987, 201, 311. <http://dx.doi.org/10.1016/S0003-2670(00)85351-9>